Tm₃Ag₃Pb₃ is an intermetallic semiconductor compound combining thulium (rare earth), silver, and lead in a 1:1:1 stoichiometric ratio. This is a research-phase material studied primarily for its electronic and thermal properties within the broader class of rare-earth-based intermetallics, which are of interest for thermoelectric and solid-state device applications. The combination of a rare earth element with noble and post-transition metals suggests potential utility in high-temperature electronics or specialized semiconductor devices, though practical industrial applications remain limited and the material is not yet widely adopted in commercial products.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 72.23 | GPa | — | ||
Shear Modulus(G) | 30.42 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.02260 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.3410 | eV/atom | — |