Tm2 Zn1 Ru1
semiconductorTm₂Zn₁Ru₁ is an intermetallic semiconductor compound combining thulium, zinc, and ruthenium in a defined stoichiometric ratio. This is a research-phase material studied for its electronic and thermal properties within the broader family of rare-earth intermetallics, which are explored for thermoelectric, magnetoelectronic, and catalytic applications where the rare-earth constituent (thulium) provides unique electronic structure. While not yet in widespread industrial use, materials of this composition family are of interest to materials scientists investigating how rare-earth elements can be leveraged to tune semiconductor behavior and functional properties in niche applications requiring specialized electronic or thermal characteristics.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | ksi | — | — | |
Shear Modulus(G) | — | ksi | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |