Tm₂Te₁O₂ is a rare-earth telluride oxide semiconductor combining thulium, tellurium, and oxygen in a mixed-valence compound. This is a research-phase material being investigated for its electronic and optical properties rather than an established commercial semiconductor; it belongs to the broader family of rare-earth chalcogenide compounds with potential for photonic and optoelectronic device applications. The incorporation of tellurium and rare-earth elements suggests interest in infrared absorption, emission, or tunable electronic behavior—properties that could serve niche applications in thermal imaging, quantum dots, or specialized radiation detectors if viable synthesis and doping methods are developed.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 15,999.3 | ksi | — | ||
Shear Modulus(G) | 9,472 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.1284 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -3.095 | eV/atom | — |