Tm₂Ir₁Os₁ is an intermetallic semiconductor compound combining thulium, iridium, and osmium—a research-phase material exploring ternary metal systems with potential for high-temperature and high-strength applications. This composition sits at the intersection of rare-earth metallurgy and platinum-group transition metals, making it primarily relevant to advanced materials research rather than established industrial use. The material would be of interest to researchers investigating semiconducting behavior in refractory intermetallics, particularly where corrosion resistance, thermal stability, and mechanical stiffness at elevated temperatures are critical design constraints.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 149.7 | GPa | — | ||
Shear Modulus(G) | 68.32 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.03430 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.6790 | eV/atom | — |