Tm2 In1 Os1
semiconductorTm₂In₁Os₁ is an intermetallic compound combining thulium, indium, and osmium—a rare-earth metal system that belongs to the semiconductor or semimetal family. This is an experimental material primarily of research interest rather than established in mainstream industrial production; such ternary rare-earth intermetallics are investigated for their electronic and magnetic properties that may enable novel device concepts. The combination of osmium (a refractory transition metal) with rare-earth thulium and post-transition metal indium positions this compound for potential applications in high-temperature electronics, topological materials research, or specialized thermoelectric systems where unusual band structure properties could offer advantages over conventional semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | ksi | — | — | |
Shear Modulus(G) | — | ksi | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |