Tm2 Ga1 Os1

semiconductor

· Tm2 Ga1 Os1

Tm₂GaOs is an intermetallic compound combining rare-earth (thulium), group-13 (gallium), and transition-metal (osmium) elements. This is a research-phase material within the broader family of ternary intermetallics; compounds of this type are typically investigated for their potential in high-temperature structural applications, electronic devices, and thermoelectric systems where the combination of rare-earth and refractory elements may offer unusual combinations of thermal stability and electronic properties. Limited industrial deployment exists; material selection would be driven by specialized applications requiring extreme conditions or novel functional properties rather than cost or established manufacturing infrastructure.

high-temperature structural compoundsthermoelectric researchadvanced electronicsexperimental intermetallicsrefractory alloy development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.01360	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.4840	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Tm2 Ga1 Os1

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control