Tm1 Si2 Pd2
semiconductorTm₁Si₂Pd₂ is an intermetallic compound combining thulium, silicon, and palladium elements, belonging to the semiconductor material class. This is a research-phase compound rather than a commercially established alloy; intermetallic semiconductors of this type are studied for potential applications in high-temperature electronics, thermoelectric devices, and specialized optoelectronic systems where the unique electronic structure of rare-earth palladium silicides may offer advantages over conventional semiconductors. The material's relevance depends on its thermal stability, bandgap characteristics, and carrier mobility—properties that make rare-earth intermetallics candidates for niche applications requiring temperature resistance or specific electronic behavior unavailable in silicon or III-V semiconductors.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 19,879.9 | ksi | — | ||
Shear Modulus(G) | 6,869 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01440 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.8500 | eV/atom | — |