Tm1 Bi2 I1 O4

semiconductor

· Tm1 Bi2 I1 O4

Tm₁Bi₂I₁O₄ is an experimental mixed-metal oxide-iodide semiconductor combining thulium, bismuth, and iodine in a layered crystal structure. This material belongs to the rare-earth bismuth halide family, which is actively researched for optoelectronic and photovoltaic applications where tunable bandgaps and layered transport properties offer advantages over conventional semiconductors. The incorporation of thulium (a lanthanide) and bismuth—both known for strong spin-orbit coupling—makes this compound of interest for next-generation photon detection, X-ray sensing, and potentially topological electronic devices, though it remains largely in the research phase without established large-scale industrial production.

experimental optoelectronicsX-ray and gamma-ray detectorsphotovoltaic researchrare-earth semiconductor compoundsscintillation materials developmentquantum materials research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	80.58	GPa	—
Shear Modulus(G)	45.37	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.575	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.110	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Tm1 Bi2 I1 O4

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control