Tm₁Bi₂Cl₁O₄ is an oxyhalide semiconductor compound combining thulium, bismuth, chlorine, and oxygen—a rare-earth/post-transition metal composition that represents an emerging class of layered semiconductors. This material is primarily of research interest rather than established industrial production, investigated for optoelectronic and photocatalytic applications due to its mixed-metal framework and tunable bandgap characteristics. The combination of rare-earth and heavy-metal elements positions it within exploratory materials for next-generation semiconducting devices, particularly where bismuth-containing layered oxides have shown promise in photocatalysis and visible-light-responsive applications.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 12,505.4 | ksi | — | ||
Shear Modulus(G) | 6,769.3 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.497 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.236 | eV/atom | — |