Tm1B2Ru3 is an experimental intermetallic compound combining thulium, boron, and ruthenium, classified as a semiconductor material. This ternary phase belongs to the rare-earth metal boride family and exists primarily in research and development contexts rather than established commercial applications. Materials in this family are investigated for their potential in high-temperature electronics, thermoelectric devices, and advanced ceramic composites where rare-earth transition-metal borides can offer unique combinations of electrical and mechanical properties.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 228.2 | GPa | — | ||
Shear Modulus(G) | 103.6 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00150 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4630 | eV/atom | — |