TlYO₃ is a rare-earth oxide semiconductor compound combining thallium and yttrium in a perovskite-related structure. This material remains primarily in the research and development phase, studied for potential optoelectronic and photonic applications where its unique electronic properties could enable novel device concepts. While not yet established in mainstream industrial production, compounds in this thallium–rare-earth family are investigated for next-generation semiconductors where conventional materials reach performance limits, though synthesis complexity and thallium toxicity considerations currently restrict practical adoption.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.095 | eV | — | ||
| ↳ | 0.000 | eV | — | ||
Magnetic Moment(μB)2 entries | 0.000 | μB | — | ||
| ↳ | 2.000 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf)2 entries | -2.278 | eV/atom | — | ||
| ↳ | 0.9800 | eV/atom | — |