TlTaO2S

semiconductor

· TlTaO2S

TlTaO₂S is a mixed-anion semiconductor compound combining thallium, tantalum, oxygen, and sulfur—a rare ternary/quaternary material primarily investigated in research settings for its unique electronic and optical properties arising from the sulfur substitution in a tantalum oxide framework. This material belongs to the family of metal oxysulfides and is of interest for photocatalytic and optoelectronic applications where the sulfur incorporation can lower the bandgap and modify charge transport compared to purely oxide or sulfide alternatives. Industrial adoption remains limited; TlTaO₂S is primarily explored in academic and exploratory technology contexts rather than established commercial applications.

photocatalysis researchoptoelectronic semiconductorsbandgap engineeringvisible-light catalystsexperimental thin filmsadvanced materials development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.6000	eV	—
Magnetic Moment(μB)	0.00000286	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.3000	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

TlTaO2S

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control