TlSe
semiconductorTlSe is a narrow-bandgap semiconductor compound formed from thallium and selenium, belonging to the III-VI family of binary semiconductors. Historically studied for infrared detection and optoelectronic applications due to its narrow bandgap energy, TlSe remains primarily a research material rather than a mainstream engineering compound; it has seen limited industrial adoption compared to more stable alternatives like HgCdTe or modern quantum dots, partly due to thallium's toxicity and the material's thermodynamic instability at elevated temperatures. Engineers may encounter TlSe in specialized contexts involving infrared sensing, thermal imaging research, or photovoltaic investigations where its unique electronic structure offers theoretical advantages, though material availability, processing challenges, and health/environmental concerns typically favor other semiconductor options for production applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | ksi | — | — | |
Poisson's Ratio(ν) | — | - | — | — | |
Shear Modulus(G) | — | ksi | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | — | lb/in³ | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | — | eV | — | — | |
| ↳ | — | eV | — | — | |
Magnetic Moment(μB) | — | µB | — | — | |
Seebeck Coefficient(S) | — | µV/K | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | — | eV/atom | — | — | |
Formation Energy(ΔHf)2 entries | — | eV/atom | — | — | |
| ↳ | — | eV/atom | — | — |