TlNpO3

semiconductor

· TlNpO3

TlNiO3 is a mixed-valence ternary oxide semiconductor composed of thallium, nickel, and oxygen, belonging to the perovskite or perovskite-related oxide family. This material is primarily investigated in research contexts for its electronic and magnetic properties rather than established industrial production. It represents a candidate material for next-generation electronic devices, photocatalysis, and energy applications where the interplay between thallium and nickel oxidation states can be engineered to tune band gap and carrier behavior.

experimental photocatalystsoxide electronics researchband gap engineeringmagnetoelectric studiesthin-film device developmentmaterials discovery platforms

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.113	eV	—
Magnetic Moment(μB)	0.4000	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.466	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

TlNpO3

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control