TlN₃ is an experimental nitride compound containing thallium, belonging to the wider family of metal nitrides being investigated for advanced semiconductor and refractory applications. This material remains primarily in research phase rather than established industrial production, with interest centered on its potential as a wide-bandgap semiconductor or hard coating material. The thallium nitride family is explored for high-temperature electronics, optoelectronics, and wear-resistant applications where conventional semiconductors reach thermal limits, though toxicity concerns and processing challenges have limited commercial deployment compared to more mature alternatives like gallium nitride or titanium nitride.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 27.92 | GPa | — | ||
Poisson's Ratio(ν) | 0.3400 | - | — | ||
Shear Modulus(G) | 10.39 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.799 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 3.580 | eV | — | ||
| ↳ | 1.849 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 21.15 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | — | ||
Seebeck Coefficient(S) | -194.1 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.3211 | eV/atom | — | ||
Formation Energy(ΔHf) | 0.3094 | eV/atom | — |