TlLaO3 is a perovskite oxide semiconductor composed of thallium, lanthanum, and oxygen. This material is primarily of research and development interest rather than established industrial production, with investigation focused on its potential ferroelectric, photonic, and electronic properties within the broader family of complex oxide perovskites. Its appeal lies in the potential for novel functionality in optoelectronic devices and solid-state applications where thallium and rare-earth doping can introduce unique electronic or optical characteristics compared to conventional binary oxides.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.050 | eV | — | ||
| ↳ | 0.000 | eV | — | ||
Magnetic Moment(μB)2 entries | 0.000 | μB | — | ||
| ↳ | 2.000 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf)2 entries | -2.216 | eV/atom | — | ||
| ↳ | 0.9800 | eV/atom | — |