TlInTe2 is a ternary chalcogenide semiconductor compound composed of thallium, indium, and tellurium, belonging to the class of narrow-bandgap semiconductors with potential thermoelectric and infrared optoelectronic properties. This material is primarily of research interest for mid- to far-infrared photodetectors, thermal imaging sensors, and thermoelectric energy conversion applications where its semiconductor bandgap and thermal properties are advantageous. Compared to binary alternatives like InTe or PbTe, ternary compounds like TlInTe2 offer tunable electronic properties and potential improvements in lattice matching for heterostructures, though material stability and manufacturability remain active areas of investigation.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 3,573.7 | ksi | DFT · OptB88vdW | ||
Poisson's Ratio(ν) | 0.2700 | - | DFT · OptB88vdW | ||
Shear Modulus(G) | 1,991.4 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2556 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 0.6200 | eV | Measured | ||
| ↳ | 0.5450 | eV | DFT · OptB88vdW | ||
| ↳ | 0.9880 | eV | DFT · TBmBJ | ||
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries | 14.09 | - | DFT · OptB88vdW | ||
| ↳ | 10.38 | - | DFT · TBmBJ | ||
Electron Effective Mass(m*e) | 0.2100 | me | DFT · OptB88vdW · 27°C | ||
Hole Effective Mass(m*h) | 0.5533 | me | DFT · OptB88vdW · 27°C | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Thermoelectric Power Factor(PF)2 entries | 0.00254 | W/(m·K²) | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 0.000965 | W/(m·K²) | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Seebeck Coefficient(S)2 entries | -147.8 | μV/K | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 150.9 | μV/K | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 31.85 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.3687 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data