TlInSiS₄ is a quaternary chalcogenide ceramic compound combining thallium, indium, silicon, and sulfur elements. This material belongs to the family of sulfide-based semiconductors and ionic crystals, typically explored in research contexts for optoelectronic and photonic device applications. The thallium-indium-silicate sulfide system is notable for potential wide bandgap semiconductor properties and infrared transmission characteristics that distinguish it from conventional oxide ceramics, though it remains largely in developmental stages rather than mainstream production.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1510 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.465 | eV | DFT · OptB88vdW | ||
Thermoelectric Power Factor(PF)2 entries | 0.00121 | W/(m·K²) | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 0.000637 | W/(m·K²) | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Seebeck Coefficient(S)2 entries | -217.1 | μV/K | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 325.2 | μV/K | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.6457 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data