TlInS2

Name: TlInS2
Brand: MatWorld

semiconductor

· TlInS2

TlInS2 is a ternary semiconductor compound belonging to the thallium-indium chalcogenide family, combining elements from Groups IIIA and VIA of the periodic table. This material is primarily of research interest for optoelectronic and photonic device development, where its layered crystal structure and tunable bandgap make it a candidate for infrared detectors, photovoltaic absorbers, and nonlinear optical applications. Engineers and researchers exploring TlInS2 typically do so in experimental contexts where direct-bandgap semiconductors with anisotropic optical properties or two-dimensional material potential are advantageous over conventional silicon or III-V compounds.

infrared photodetectorsexperimental optoelectronicslayered semiconductor researchnonlinear optical devicesthin-film photovoltaics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

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Method

Property	Value	Unit	Conditions
Bulk Modulus(K)2 entries	6,764.7	ksi	DFT
↳	7,407.1	ksi	DFT · OptB88vdW
Exfoliation Energy(Eexf)	113.2	meV/atom	DFT · OptB88vdW
Poisson's Ratio(ν)	0.3000	-	DFT · OptB88vdW
Shear Modulus(G)2 entries	3,237.7	ksi	DFT
↳	3,585.3	ksi	DFT · OptB88vdW

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Density(ρ)	0.2342	lb/in³	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

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Method

Carrier

Property	Value	Unit	Conditions
Band Gap(Eg)2 entries	2.300	eV	Measured
↳	0.4470	eV	DFT · OptB88vdW
Dielectric Constant (Relative Permittivity)(εr)2 entries	49.72	-	DFT · OptB88vdW
↳	45.63	-	DFT · PBE
High-Frequency Dielectric Constant (ε∞)(ε∞)	10.57	-	DFT · OptB88vdW
Electronic Dielectric Tensor(ε∞)	Matrix (redacted)	-	DFT · PBE
Total Dielectric Tensor(ε)	Matrix (redacted)	-	DFT · PBE
Electron Effective Mass(m*e)	0.1767	me	DFT · OptB88vdW · 27°C
Hole Effective Mass(m*h)	0.3233	me	DFT · OptB88vdW · 27°C
Magnetic Moment(μB)	0.000	µB	DFT · OptB88vdW
Piezoelectric Modulus(eij)	0.000	C/m²	DFT · OptB88vdW
Thermoelectric Power Factor(PF)2 entries	0.00156	W/(m·K²)	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	0.00204	W/(m·K²)	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Seebeck Coefficient(S)2 entries	-128.7	μV/K	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	209.9	μV/K	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.000400	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)	-0.6071	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

TlInS2 — Properties & Data | MatWorld

TlInS2

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