TlInS2 is a ternary semiconductor compound belonging to the thallium-indium chalcogenide family, combining elements from Groups IIIA and VIA of the periodic table. This material is primarily of research interest for optoelectronic and photonic device development, where its layered crystal structure and tunable bandgap make it a candidate for infrared detectors, photovoltaic absorbers, and nonlinear optical applications. Engineers and researchers exploring TlInS2 typically do so in experimental contexts where direct-bandgap semiconductors with anisotropic optical properties or two-dimensional material potential are advantageous over conventional silicon or III-V compounds.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)2 entries | 46.64 | GPa | — | ||
| ↳ | 51.07 | GPa | — | ||
Exfoliation Energy(Eexf) | 113.2 | meV/atom | — | ||
Poisson's Ratio(ν) | 0.3000 | - | — | ||
Shear Modulus(G)2 entries | 22.32 | GPa | — | ||
| ↳ | 24.72 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 6.483 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 2.300 | eV | — | ||
| ↳ | 0.7340 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr)2 entries | 45.63 | - | — | ||
| ↳ | 49.72 | - | — | ||
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | — | ||
Total Dielectric Tensor(ε) | Matrix (redacted) | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | — | ||
Seebeck Coefficient(S) | -141.3 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000400 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.6071 | eV/atom | — |