TlInO2N

ceramic

· TlInO2N

TlInO₂N is an experimental mixed-metal oxynitride ceramic compound containing thallium, indium, oxygen, and nitrogen. This material belongs to the class of complex oxide nitrides and is primarily of research interest for its potential in optoelectronic and photocatalytic applications, where the combination of elements and nitrogen incorporation may offer band gap engineering opportunities. While not yet commercially established, materials in this family are being investigated for next-generation semiconductor and photocatalyst applications where conventional oxides or nitrides fall short.

photocatalytic materials (research)semiconductor optoelectronics (experimental)band gap engineeringvisible-light photocatalysisadvanced ceramic researchthin-film device development

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

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Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	DFT · GLLB-SC
Magnetic Moment(μB)	2.933	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.340	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

TlInO2N — Properties & Data | MatWorld

TlInO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental