TlIn5S6 is a ternary chalcogenide ceramic compound combining thallium, indium, and sulfur, belonging to the family of metal sulfide semiconductors. This material is primarily of research interest for optoelectronic and infrared applications, where its narrow bandgap and photosensitive properties make it relevant for photodetection and sensing in the infrared spectrum. While not yet widely deployed in mainstream industrial production, chalcogenide compounds like TlIn5S6 are being investigated as alternatives to conventional semiconductors for specialized imaging and sensing systems that require sensitivity in wavelength ranges where traditional materials are ineffective.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1872 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.9630 | eV | DFT · OptB88vdW | ||
Electron Effective Mass(m*e) | 1.307 | me | DFT · OptB88vdW · 27°C | ||
Hole Effective Mass(m*h) | 0.5633 | me | DFT · OptB88vdW · 27°C | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Thermoelectric Power Factor(PF)2 entries | 0.00111 | W/(m·K²) | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 0.000492 | W/(m·K²) | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Seebeck Coefficient(S)2 entries | -158.2 | μV/K | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 134.7 | μV/K | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.00140 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.5904 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data