TlGaTe2 is a ternary semiconductor compound composed of thallium, gallium, and tellurium, belonging to the family of III-V-VI semiconductors. This material is primarily of research interest for optoelectronic and photovoltaic applications, particularly in infrared detection and energy conversion where its direct bandgap and carrier mobility characteristics offer potential advantages over conventional binary semiconductors. While not yet widely commercialized, ternary chalcogenides like TlGaTe2 are investigated as candidates for next-generation solar cells, thermal imaging sensors, and radiation detection devices due to their tunable electronic properties and reduced lattice mismatch in heterostructure designs.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 26.76 | GPa | DFT · OptB88vdW | ||
Poisson's Ratio(ν) | 0.2700 | - | DFT · OptB88vdW | ||
Shear Modulus(G) | 14.93 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 6.974 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 1.800 | eV | Measured | ||
| ↳ | 0.5130 | eV | DFT · OptB88vdW | ||
| ↳ | 0.9290 | eV | DFT · TBmBJ | ||
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries | 14.84 | - | DFT · OptB88vdW | ||
| ↳ | 10.56 | - | DFT · TBmBJ | ||
Electron Effective Mass(m*e) | 0.06667 | me | DFT · OptB88vdW · 27°C | ||
Hole Effective Mass(m*h) | 0.1000 | me | DFT · OptB88vdW · 27°C | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Thermoelectric Power Factor(PF)2 entries | 0.00209 | W/(m·K²) | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 0.00131 | W/(m·K²) | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Seebeck Coefficient(S)2 entries | -119.6 | μV/K | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 197.5 | μV/K | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 31.05 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.3700 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data