TlGaTe2 is a ternary semiconductor compound composed of thallium, gallium, and tellurium, belonging to the family of III-V-VI semiconductors. This material is primarily of research interest for optoelectronic and photovoltaic applications, particularly in infrared detection and energy conversion where its direct bandgap and carrier mobility characteristics offer potential advantages over conventional binary semiconductors. While not yet widely commercialized, ternary chalcogenides like TlGaTe2 are investigated as candidates for next-generation solar cells, thermal imaging sensors, and radiation detection devices due to their tunable electronic properties and reduced lattice mismatch in heterostructure designs.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 26.76 | GPa | — | ||
Poisson's Ratio(ν) | 0.2700 | - | — | ||
Shear Modulus(G) | 14.93 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 6.974 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.800 | eV | — | ||
| ↳ | 0.5130 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -119.6 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.3700 | eV/atom | — |