TlGaSe2
semiconductorTlGaSe2 is a ternary III-VI semiconductor compound composed of thallium, gallium, and selenium, belonging to the family of layered chalcogenide semiconductors. This material is primarily investigated in research contexts for infrared optics and nonlinear optical applications, where its wide bandgap and anisotropic crystal structure enable efficient light modulation and frequency conversion in the mid- to far-infrared spectrum. While not yet widely deployed in mainstream industrial production, TlGaSe2 represents a promising alternative to conventional crystals like cadmium telluride and selenium for specialized optoelectronic devices where thermal stability, optical transparency, and nonlinear response are critical—making it of particular interest to researchers developing tunable lasers, infrared detectors, and parametric amplifiers.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | ksi | — | — | |
Poisson's Ratio(ν) | — | - | — | — | |
Shear Modulus(G) | — | ksi | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | — | lb/in³ | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | — | eV | — | — | |
| ↳ | — | eV | — | — | |
Magnetic Moment(μB) | — | µB | — | — | |
Seebeck Coefficient(S) | — | µV/K | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | — | eV/atom | — | — | |
Formation Energy(ΔHf) | — | eV/atom | — | — |