TlGaS2 — Properties & Data | MatWorld

TlGaS2

Name: TlGaS2
Brand: MatWorld

semiconductor

· TlGaS2

TlGaS2 is a ternary III-VI semiconductor compound composed of thallium, gallium, and sulfur, belonging to the family of chalcogenide semiconductors with layered crystal structures. This material is primarily investigated in research contexts for infrared optics and nonlinear optical applications, where its wide bandgap and anisotropic crystal properties enable frequency conversion and detection in the mid- to far-infrared spectrum. While not yet widely commercialized, TlGaS2 represents a promising alternative to conventional infrared materials like ZnSe or AgGaS₂ due to its chemical stability and tunable optical response, making it of interest to researchers developing compact infrared photonic devices and sensors.

infrared optics and photonicsnonlinear optical frequency conversioninfrared detectors and sensorsResearch and development materialswide-bandgap semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Density(ρ)	5.545	kg/m³	DFT · OptB88vdW

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Method

Carrier

Property	Value	Unit	Conditions
Band Gap(Eg)2 entries	1.821	eV	DFT · OptB88vdW
↳	3.400	eV	Measured
High-Frequency Dielectric Constant (ε∞)(ε∞)	7.502	-	DFT · OptB88vdW
Electron Effective Mass(m*e)	0.4600	me	DFT · OptB88vdW · 27°C
Hole Effective Mass(m*h)	0.6133	me	DFT · OptB88vdW · 27°C
Magnetic Moment(μB)	0.000	µB	DFT · OptB88vdW
Thermoelectric Power Factor(PF)2 entries	0.00136	W/(m·K²)	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	0.000649	W/(m·K²)	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Seebeck Coefficient(S)2 entries	-201.9	μV/K	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	121	μV/K	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.000	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)	-0.7043	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

TlGaS2

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