TlGaS2
semiconductor· TlGaS2
TlGaS2 is a ternary III-VI semiconductor compound composed of thallium, gallium, and sulfur, belonging to the family of chalcogenide semiconductors with layered crystal structures. This material is primarily investigated in research contexts for infrared optics and nonlinear optical applications, where its wide bandgap and anisotropic crystal properties enable frequency conversion and detection in the mid- to far-infrared spectrum. While not yet widely commercialized, TlGaS2 represents a promising alternative to conventional infrared materials like ZnSe or AgGaS₂ due to its chemical stability and tunable optical response, making it of interest to researchers developing compact infrared photonic devices and sensors.
infrared optics and photonicsnonlinear optical frequency conversioninfrared detectors and sensorsResearch and development materialswide-bandgap semiconductors
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | — | kg/m³ | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | — | eV | — | — | |
| ↳ | — | eV | — | — | |
Magnetic Moment(μB) | — | µB | — | — | |
Seebeck Coefficient(S) | — | µV/K | — | — |
N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form / heat treatment / basis.
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | — | eV/atom | — | — | |
Formation Energy(ΔHf) | — | eV/atom | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
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