TlGaS2 is a ternary III-VI semiconductor compound composed of thallium, gallium, and sulfur, belonging to the family of chalcogenide semiconductors with layered crystal structures. This material is primarily investigated in research contexts for infrared optics and nonlinear optical applications, where its wide bandgap and anisotropic crystal properties enable frequency conversion and detection in the mid- to far-infrared spectrum. While not yet widely commercialized, TlGaS2 represents a promising alternative to conventional infrared materials like ZnSe or AgGaS₂ due to its chemical stability and tunable optical response, making it of interest to researchers developing compact infrared photonic devices and sensors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.545 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 3.400 | eV | — | ||
| ↳ | 1.821 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -201.9 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.7043 | eV/atom | — |