TlGaO₂N is an experimental oxynitride ceramic compound combining thallium, gallium, oxygen, and nitrogen. This material belongs to the emerging class of mixed-anion ceramics designed to achieve novel electronic and optical properties not available in conventional oxides or nitrides alone. Research interest centers on photocatalytic applications and visible-light-responsive semiconductors, where the oxynitride structure enables bandgap engineering; however, TlGaO₂N remains primarily a laboratory compound with limited commercial deployment due to synthetic complexity and the toxicity concerns associated with thallium-containing materials.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | DFT · GLLB-SC | ||
Magnetic Moment(μB) | 1.795 | μB | DFT |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.200 | eV/atom | DFT |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data