TlGaN3

ceramic

· TlGaN3

TlGaN₃ is an experimental ternary nitride ceramic compound combining thallium, gallium, and nitrogen—a research-phase material not yet established in mainstream industrial production. This compound belongs to the wide-bandgap semiconductor and ceramic nitride family, positioned within exploratory materials science aimed at advanced optoelectronic and high-temperature applications. Its potential lies in niche high-performance domains where novel bandgap properties or thermal stability could offer advantages over conventional GaN, though maturity, scalability, and cost-effectiveness remain open questions requiring further development.

Experimental semiconductorsWide-bandgap materials researchHigh-temperature ceramics (developmental)Optoelectronic researchTernary nitride compoundsAdvanced materials investigation

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Filter by

Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	DFT · GLLB-SC
Magnetic Moment(μB)	4.725	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.900	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

TlGaN3 — Properties & Data | MatWorld

TlGaN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental