TlCdTe is a ternary compound semiconductor ceramic combining thallium, cadmium, and tellurium. This material belongs to the II-VI semiconductor family and is primarily investigated for infrared detection and photovoltaic applications where its bandgap properties enable sensitivity in the infrared spectrum. While less commercially established than binary alternatives like CdTe, TlCdTe is notable for research into tunable optoelectronic devices and radiation detection systems where tailored bandgap engineering is required.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 29.03 | GPa | DFT · OptB88vdW | ||
Shear Modulus(G) | 4.300 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 7.712 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.3724 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | 0.09971 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data