TlBiTeSe is a quaternary semiconductor ceramic compound composed of thallium, bismuth, tellurium, and selenium elements. This material belongs to the family of narrow-bandgap semiconductors and thermoelectric compounds, primarily investigated in materials research for advanced energy conversion and optoelectronic applications. The combination of heavy elements and mixed chalcogenide chemistry makes it noteworthy for thermoelectric efficiency and infrared detector applications, where its properties offer potential advantages over binary or ternary alternatives in specialized temperature ranges and operating conditions.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 6,429.5 | ksi | DFT · OptB88vdW | ||
Poisson's Ratio(ν) | 0.3100 | - | DFT · OptB88vdW | ||
Shear Modulus(G) | 3,486.7 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2932 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.000 | eV | DFT · OptB88vdW | ||
| ↳ | 0.000 | eV | DFT · TBmBJ | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.1495 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.2411 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data