TlBiTe2 is a ternary telluride semiconductor compound composed of thallium, bismuth, and tellurium elements. This is a research-phase material studied primarily for thermoelectric and optoelectronic applications, belonging to the broader family of bismuth telluride-based semiconductors known for their narrow bandgaps and potential for energy conversion at moderate temperatures. The material's ternary composition offers potential advantages in tuning electronic and thermal transport properties compared to binary alternatives, making it of interest for next-generation thermoelectric devices and solid-state cooling systems where performance optimization beyond conventional materials is required.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 32.51 | GPa | — | ||
Poisson's Ratio(ν) | 0.2600 | - | — | ||
Shear Modulus(G) | 22.65 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 7.758 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.1200 | eV | — | ||
| ↳ | 0.4560 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -146.6 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.3112 | eV/atom | — |