TlBiSe2 is a ternary ceramic compound composed of thallium, bismuth, and selenium, belonging to the family of chalcogenide semiconductors. This material is primarily studied in research contexts for thermoelectric and optoelectronic applications, where its layered crystal structure and electronic properties make it a candidate for solid-state energy conversion and infrared sensing devices. While not yet established in high-volume industrial production, TlBiSe2 represents the broader class of bismuth chalcogenides that engineers evaluate for niche applications requiring specific band gaps or thermal transport characteristics.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 5,826.2 | ksi | DFT · OptB88vdW | ||
Poisson's Ratio(ν) | 0.2700 | - | DFT · OptB88vdW | ||
Shear Modulus(G) | 3,594 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2975 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.2530 | eV | DFT · OptB88vdW | ||
| ↳ | 0.6800 | eV | DFT · TBmBJ | ||
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries | 20.01 | - | DFT · OptB88vdW | ||
| ↳ | 14.26 | - | DFT · TBmBJ | ||
Electron Effective Mass(m*e) | 0.07333 | me | DFT · OptB88vdW · 27°C | ||
Hole Effective Mass(m*h) | 0.08333 | me | DFT · OptB88vdW · 27°C | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Thermoelectric Power Factor(PF)2 entries | 0.00158 | W/(m·K²) | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 0.00327 | W/(m·K²) | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Seebeck Coefficient(S)2 entries | -118.3 | μV/K | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 203.5 | μV/K | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 23.24 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.1551 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.3148 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data