TlBAs is a III-V compound semiconductor ceramic composed of thallium, boron, and arsenic. This material belongs to the family of wide-bandgap semiconductors and is primarily of research interest rather than established commercial production. TlBAs and related thallium-based III-V compounds are investigated for potential optoelectronic and high-frequency electronic applications where extreme thermal stability or specialized bandgap properties might offer advantages over more conventional semiconductors like GaAs or InP, though practical challenges in synthesis, toxicity considerations, and material defects have limited widespread adoption.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 7.881 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 1.198 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | 1.132 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data