TlAgO2F

semiconductor

· TlAgO2F

TlAgO₂F is a mixed-metal oxide fluoride semiconductor containing thallium, silver, oxygen, and fluorine. This is a research-phase compound rather than a commercial material, belonging to the family of complex metal oxyfluorides that have attracted academic interest for their potential in photovoltaic and optoelectronic applications. While not yet established in production engineering, materials in this class are explored for next-generation semiconductor devices where the combination of multiple metal cations and fluoride anions can enable tunable band gaps and novel electronic properties.

experimental semiconductorsphotovoltaic researchoptoelectronic devicesthin-film electronicsmaterials science researchband-gap engineering

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.2000	eV	—
Magnetic Moment(μB)	0.000	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.120	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

TlAgO2F

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control