Tl9 Sb1 Te6

semiconductor

· Tl9 Sb1 Te6

Tl₉Sb₁Te₆ is a mixed-metal chalcogenide semiconductor compound combining thallium, antimony, and tellurium. This is a research-phase material studied for its potential in thermoelectric and optoelectronic applications, particularly where narrow bandgap semiconductors with tunable electronic properties are needed. The material belongs to the broader family of multinary telluride compounds being investigated as alternatives to conventional semiconductors in specialized thermal-to-electric energy conversion and infrared sensing contexts.

thermoelectric energy harvestinginfrared detectors and sensorsresearch semiconductorslow-bandgap device materialsheat-to-electricity conversion

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.7334	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.3000	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Tl9 Sb1 Te6

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control