Tl8 Cd2 I12
semiconductorTl₈Cd₂I₁₂ is a mixed-halide semiconductor compound combining thallium, cadmium, and iodine in a layered perovskite or perovskite-derivative crystal structure. This is a research-phase material investigated for optoelectronic and radiation detection applications, belonging to the broader family of multinary halide semiconductors that show promise for tunable bandgaps and strong light-matter interactions. The material is notable within the halide perovskite research community as a candidate for X-ray and gamma-ray detection, photovoltaic energy conversion, and solid-state scintillation due to its high atomic number constituents and potential for defect-tolerant carrier transport, though it remains in early-stage development and is not yet widely commercialized.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |