Tl8As8S16 is a thallium arsenic sulfide compound belonging to the chalcogenide semiconductor family, characterized by mixed-valence thallium and arsenic coordination within a sulfide framework. This material is primarily of research and specialized optical/photonic interest rather than high-volume industrial production, with potential applications in infrared optics, nonlinear optical devices, and solid-state physics investigations where its narrow bandgap and anisotropic crystal structure offer advantages over conventional semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 2,949.1 | ksi | — | ||
Shear Modulus(G) | 1,499.7 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.581 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.3200 | eV/atom | — |