Tl6 B2 O6

semiconductor

· Tl6 B2 O6

Tl₆B₂O₆ is an inorganic oxide semiconductor compound combining thallium and boron—a research-phase material studied for its electronic and optical properties within the broader family of mixed-metal borates. This compound represents exploratory materials chemistry rather than established industrial production, with potential applications in optoelectronics and radiation detection where its band structure and crystal properties may offer advantages over conventional semiconductors.

experimental optoelectronic devicesradiation detection researchwide-bandgap semiconductor developmentsolid-state physics researchphotonic materials exploration

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.429	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.449	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Tl6 B2 O6

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control