Tl4In3GaS8

semiconductor

· Tl4In3GaS8

Tl₄In₃GaS₈ is a quaternary chalcogenide semiconductor compound combining thallium, indium, gallium, and sulfur in a layered crystal structure. This is a research-phase material studied primarily for optoelectronic and photonic applications, particularly in the infrared spectrum where its bandgap and optical transparency characteristics are of interest. The material represents an emerging class of multinary semiconductors designed to enable tunable electronic and optical properties beyond what binary or ternary compounds offer, though industrial adoption remains limited compared to mature III-V semiconductors.

infrared optics and detectorsphotonic device researchnonlinear optical materialswide-bandgap semiconductor developmentcrystal growth and characterizationemerging semiconductor research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.630	eV	—

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Regulatory Screening

Environmental

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Tl4In3GaS8

Electrical Properties

Regulatory Screening

Environmental

Export Control