Tl4GeS4 — Properties & Data | MatWorld

Tl4GeS4

ceramic

· JVASP-11449· Tl4GeS4

Tl4GeS4 is a quaternary chalcogenide ceramic compound belonging to the sulfide family, combining thallium, germanium, and sulfur in a structured crystalline framework. This material is primarily of research interest for optoelectronic and photonic applications, where its wide bandgap and sulfide composition make it a candidate for infrared transmission windows, nonlinear optical devices, and solid-state radiation detection. While not yet widely deployed in mainstream industrial manufacturing, materials in this chemical family are explored as alternatives to more toxic or less stable compounds in specialized optical and sensing applications.

Infrared optics and windowsNonlinear optical devicesResearch-stage photonic materialsRadiation detectionSpecialized ceramic optics

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Density(ρ)	0.2396	lb/in³	DFT · OptB88vdW

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Method

Carrier

Property	Value	Unit	Conditions
Band Gap(Eg)2 entries	1.726	eV	DFT · OptB88vdW
↳	2.416	eV	DFT · TBmBJ
Dielectric Constant (Relative Permittivity)(εr)	35.92	-	DFT · OptB88vdW
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries	8.929	-	DFT · OptB88vdW
↳	6.336	-	DFT · TBmBJ
Magnetic Moment(μB)	0.000	µB	DFT · OptB88vdW
Piezoelectric Modulus(eij)	0.1218	C/m²	DFT · OptB88vdW
Thermoelectric Power Factor(PF)2 entries	0.00167	W/(m·K²)	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	0.000860	W/(m·K²)	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Seebeck Coefficient(S)2 entries	-258.1	μV/K	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	308.3	μV/K	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Spectroscopic Limited Maximum Efficiency (SLME)(SLME)	14.31	%	DFT · TBmBJ

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.000	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)	-0.4652	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Tl4GeS4

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental