Tl₄CuTeO₆ is a complex oxide semiconductor compound containing thallium, copper, and tellurium, representing a mixed-valence metal oxide system with potential for electronic applications. This material is primarily of research interest rather than established industrial use, studied for its electrical and optical properties as part of the broader family of quaternary oxides and tellurite-based semiconductors. Engineers evaluating this compound should note it remains in early-stage research; potential advantages over conventional semiconductors would depend on specific device requirements such as bandgap tuning, thermal stability, or integration with other functional ceramics.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.3081 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 2.200 | eV | — | ||
| ↳ | 0.5190 | eV | — | ||
Magnetic Moment(μB) | 1.975 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.9097 | eV/atom | — |