Tl4 Zn4 As4 O16

semiconductor

· Tl4 Zn4 As4 O16

Tl₄Zn₄As₄O₁₆ is a quaternary mixed-metal oxide semiconductor compound containing thallium, zinc, and arsenic. This material is primarily of research interest rather than established commercial use, belonging to the family of complex oxide semiconductors that are investigated for potential optoelectronic and photocatalytic applications. The compound's notable feature is its layered structure combining multiple metal cations, which researchers explore for tuning bandgap properties and light-absorption characteristics in experimental device architectures.

experimental semiconductorsoptoelectronic researchphotocatalysis developmentthin-film device prototypingmaterials research (non-production)

Compliance & Regulations

?ITAR?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	3.237	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.358	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

Quality & Standards

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Tl4 Zn4 As4 O16

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control

Quality & Standards