Tl₄Si₂Se₆ is a quaternary semiconductor compound combining thallium, silicon, and selenium in a layered crystal structure, belonging to the family of chalcogenide semiconductors. This is a research-phase material primarily investigated for its potential in optoelectronic and thermoelectric applications, where its narrow bandgap and layered structure could enable infrared detection, photovoltaic conversion, or solid-state cooling devices. The material represents an emerging class of complex semiconductors offering alternatives to conventional binary or ternary compounds by tuning electronic properties through multi-element composition.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 2,976.5 | ksi | — | ||
Shear Modulus(G) | 1,449.4 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.531 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4700 | eV/atom | — |