Tl₄Si₂S₆ is a ternary chalcogenide semiconductor compound combining thallium, silicon, and sulfur in a layered crystal structure. This is an experimental research material primarily of interest for optoelectronic and photonic applications, studied for potential use in infrared detection, nonlinear optical devices, and solid-state physics research where its wide bandgap and thermal stability may offer advantages over more conventional semiconductors. The material remains largely confined to laboratory investigation rather than mature industrial production, positioning it as a candidate for next-generation photonics if processing and scalability challenges can be overcome.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 21.46 | GPa | — | ||
Shear Modulus(G) | 10.33 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.052 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.6480 | eV/atom | — |