Tl4 In4 As8 O28
semiconductor· Tl4 In4 As8 O28
Tl₄In₄As₈O₂₈ is a mixed-metal oxide semiconductor compound containing thallium, indium, and arsenic in a complex crystalline structure. This is a research-phase material studied primarily for optoelectronic and photonic applications where its band gap and crystal structure may enable light emission, detection, or nonlinear optical behavior. The thallium-indium-arsenic oxide family remains largely exploratory, with potential relevance to narrow-band optical devices or specialized semiconductor heterostructures where conventional III-V or II-VI semiconductors are insufficient.
optoelectronic researchnonlinear optical materialsphotonic device developmentwide-gap semiconductor researchcompound semiconductor characterization
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.