Tl4 In4 As8 O28

semiconductor

· Tl4 In4 As8 O28

Tl₄In₄As₈O₂₈ is a mixed-metal oxide semiconductor compound containing thallium, indium, and arsenic in a complex crystalline structure. This is a research-phase material studied primarily for optoelectronic and photonic applications where its band gap and crystal structure may enable light emission, detection, or nonlinear optical behavior. The thallium-indium-arsenic oxide family remains largely exploratory, with potential relevance to narrow-band optical devices or specialized semiconductor heterostructures where conventional III-V or II-VI semiconductors are insufficient.

optoelectronic researchnonlinear optical materialsphotonic device developmentwide-gap semiconductor researchcompound semiconductor characterization

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	3.086	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.350	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Tl4 In4 As8 O28

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control