Tl4 Ge4 O14
semiconductor· Tl4 Ge4 O14
Tl₄Ge₄O₁₄ is a mixed-metal oxide semiconductor composed of thallium and germanium with a complex layered crystal structure. This is a research compound rather than a commercial material, studied primarily for its electronic and photonic properties within the broader family of oxide semiconductors and ion conductors. Interest centers on potential applications in solid-state devices where the combination of heavy metal cations (Tl) and tetrahedral germanate units may enable novel charge transport, optical, or ferroelectric behavior.
experimental semiconductorssolid-state ionics researchoptical materials developmentelectronic device materialscrystal structure engineering
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.