Tl4 Ge4 O14

semiconductor

· Tl4 Ge4 O14

Tl₄Ge₄O₁₄ is a mixed-metal oxide semiconductor composed of thallium and germanium with a complex layered crystal structure. This is a research compound rather than a commercial material, studied primarily for its electronic and photonic properties within the broader family of oxide semiconductors and ion conductors. Interest centers on potential applications in solid-state devices where the combination of heavy metal cations (Tl) and tetrahedral germanate units may enable novel charge transport, optical, or ferroelectric behavior.

experimental semiconductorssolid-state ionics researchoptical materials developmentelectronic device materialscrystal structure engineering

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.1170	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.320	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Tl4 Ge4 O14

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control