Tl₄Ge₂Se₆ is a mixed-cation chalcogenide semiconductor compound combining thallium, germanium, and selenium in a layered crystal structure. This material belongs to the family of narrow-bandgap semiconductors and is primarily of research interest for infrared optoelectronics, thermoelectric applications, and solid-state physics studies, where its layered geometry and tunable electronic properties offer potential advantages over conventional binary semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 2,973.3 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | 1,334.3 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.9673 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.3710 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data