Tl₄Ge₂Se₆ is a mixed-cation chalcogenide semiconductor compound combining thallium, germanium, and selenium in a layered crystal structure. This material belongs to the family of narrow-bandgap semiconductors and is primarily of research interest for infrared optoelectronics, thermoelectric applications, and solid-state physics studies, where its layered geometry and tunable electronic properties offer potential advantages over conventional binary semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 20.50 | GPa | — | ||
Shear Modulus(G) | 9.200 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.9673 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.3710 | eV/atom | — |