Tl4 Cu2 As2 O8

semiconductor

· Tl4 Cu2 As2 O8

Tl₄Cu₂As₂O₈ is a mixed-metal oxide semiconductor containing thallium, copper, and arsenic in a layered crystal structure. This is a research compound rather than a commercial engineering material, belonging to the family of complex oxides being investigated for potential electronic and photonic applications. While not widely deployed industrially, compounds in this material class are of interest to researchers exploring novel semiconducting oxides with tailored band structures, possibly for optoelectronic devices or as model systems for understanding electron transport in layered systems.

experimental semiconductor researchlayered oxide materialsmaterials science studiesadvanced electronics researchband structure engineering

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.536	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.033	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Tl4 Cu2 As2 O8

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control